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SSM6N7002BFU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications | |||
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SSM6N7002BFU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSâ
£)
SSM6N7002BFU
High-Speed Switching Applications
Analog Switch Applications
⢠Small package
⢠Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)
: RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
2.1±0.1
1.25±0.1
Unit: mm
1
6
2
5
3
4
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
± 20
V
Drain current
DC
Pulse
ID
200
mA
IDP
800
US6
Drain power dissipation (Ta = 25°C) PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
â55 to 150
°C
1.SOURCE1 4.SOURCE2
2.GATE1 5.GATE2
3.DRAIN2 6.DRAIN1
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
â
temperature, etc.) may cause this product to decrease in the
JEITA
SC-88
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2J1C
absolute maximum ratings.
Weight: 6.8 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1:Total rating, mounted on FR4 board
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 0.32mm2 à 6)
0.4 mm
Marking
6
5
4
NM
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
1
2009-11-26
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