SSM6N7002BFE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications

SSM6N7002BFE
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM6N7002BFE
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low ON-resistance : R_DS(ON) = 3.3 Ω (max) (@V_GS = 4.5 V)
: R_DS(ON) = 2.6 Ω (max) (@V_GS = 5 V)
: R_DS(ON) = 2.1 Ω (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
1.6±0.05
1.2±0.05
1
6
2
5
3
4
Drain-source voltage
V_DSS
60
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
200
mA
I_DP
800
Power dissipation
P_D (Note 1)
150
mW
1.SOURCE1 4.SOURCE2
2.GATE1
5.GATE2
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
3.DRAIN2
ES6
JEDEC
6.DRAIN1
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2N1D
operating temperature/current/voltage, etc.) are within the
Weight: 3.0 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135mm² × 6)
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
NM
Q1
Q2
1
2
3
1
2
3
1
2009-11-27