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| SSM6N57NU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS | |||
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MOSFETs Silicon N-Channel MOS
SSM6N57NU
1. Applications
⢠Power Management Switches
⢠DC-DC Converters
2. Features
(1) 1.8 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 39.1 m⦠(max) (@VGS = 4.5 V)
RDS(ON) = 53 m⦠(max) (@VGS = 2.5 V)
RDS(ON) = 82 m⦠(max) (@VGS = 1.8 V)
3. Packaging and Pin Configuration
UDFN6
SSM6N57NU
1. Source1 (S1)
2. Gate1 (G1)
3. Drain2 (D2)
4. Source2 (S2)
5. Gate2 (G2)
6. Drain1 (D1)
Start of commercial production
2012-07
1
2014-04-04
Rev.2.0
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