SSM6N48FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Load Switching Applications

SSM6N48FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N48FU
Load Switching Applications
• 2.5-V drive
• N-ch 2-in-1
• Low ON-resistance: R_DS(ON) = 3.2 Ω (max) (@V_GS = 4.0 V)
R_DS(ON) = 5.4 Ω (max) (@V_GS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
400
Power dissipation
Channel temperature
Storage temperature range
P_D (Note 1)
300
mW
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
―
SC-88
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2J1C
high temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm² × 6)
0.4 mm
Marking
6
5
4
DZ
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
1
2010-11-22