SSM6N37FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switch Applications

SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N37FU
○ High Speed Switching Applications
○ Analog Switch Applications
Unit: mm
• 1.5Vdrive
• Low ON-resistance
R_DS(ON) = 5.60 Ω (max) (@V_GS = 1.5 V)
R_DS(ON) = 4.05 Ω (max) (@V_GS = 1.8 V)
R_DS(ON) = 3.02 Ω (max) (@V_GS = 2.5 V)
R_DS(ON) = 2.20 Ω (max) (@V_GS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
20
V
Gate-Source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
250
mA
500
Power dissipation
P_D(Note1)
300
mW
JEDEC
―
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2J1C
Weight: 6.8 mg(typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm² × 6)
0.4 mm
Marking(top view)
6
5
4
SU
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
1
2010-08-31