SSM6N37CTD Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM6N37CTD
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37CTD
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance
R_on = 5.60 Ω (max) (@V_GS = 1.5 V)
R_on = 4.05 Ω (max) (@V_GS = 1.8 V)
R_on = 3.02 Ω (max) (@V_GS = 2.5 V)
R_on = 2.20 Ω (max) (@V_GS = 4.5 V)
Top View
1.0±0.05
0.15±0.03
65 4
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
250
mA
500
Drain power dissipation
P_D (Note 1)
140
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
1 23
0.35 0.35
±0.02 ±0.02
0.7±0.03
0.075±0.03
CST6D
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-1S1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight : 1.0 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm² )
Marking
Pin Condition (top view)
65
4
Equivalent Circuit (top view)
65
4
SU
Q1 _Q2
Polarity mark
12
3
Polarity mark (on the top)
*Electrodes: on the bottom
12
3
1
2009-08-11