SSM6N36FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Fiwld Effect Transistor Silicon N-Channel MOS Type

SSM6N36FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N36FE
○ High-Speed Switching Applications
• 1.5-V drive
• Low ON-resistance: R_on = 1.52 Ω (max) (@V_GS = 1.5 V)
: R_on = 1.14 Ω (max) (@V_GS = 1.8 V)
: R_on = 0.85 Ω (max) (@V_GS = 2.5 V)
: R_on = 0.66 Ω (max) (@V_GS = 4.5 V)
: R_on = 0.63 Ω (max) (@V_GS = 5.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
Characteristics
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
500
mA
1000
Drain power dissipation
P_D (Note 1)
150
mW
ES6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1A
reliability significantly even if the operating conditions (i.e. operating
Weight: 3.0 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
NX
1
2
3
Q1
Q2
1
2
3
1
2008-02-26