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SSM6N35FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type | |||
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SSM6N35FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE
â High-Speed Switching Applications
â Analog Switch Applications
⢠1.2-V drive
⢠N-ch 2-in-1
⢠Low ON-resistance: Ron = 20 ⦠(max) (@VGS = 1.2 V)
: Ron = 8 ⦠(max) (@VGS = 1.5 V)
: Ron = 4 ⦠(max) (@VGS = 2.5 V)
: Ron = 3 ⦠(max) (@VGS = 4.0 V)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Gateâsource voltage
Drain current
DC
Pulse
VDSS
VGSS
ID
IDP
20
V
±10
V
180
mA
360
ES6
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
-
Drain power dissipation
PD(Note 1)
150
mW
JEITA
-
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 0.135 mm2 à 6)
Marking
6
5
4
KZ
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
1
2008-03-10
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