SSM6N29TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6N29TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N29TU
High-Speed Switching Applications
• 1.8 V drive
• N-ch 2-in-1
• Low ON-resistance:
R_on = 235 mΩ (max) (@V_GS = 1.8 V)
R_on = 178 mΩ (max) (@V_GS = 2.5 V)
R_on = 143 mΩ (max) (@V_GS = 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1 , Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DS
20
V
Gate-source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
0.8
A
1.6
Drain power dissipation
P_{D (Note 1)}
500
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
− 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm² )
Electrical Characteristics (Ta = 25°C) (Q1 , Q2 Common)
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
1.Source1
2.Gate1
UF6 ^3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2 : Pulse test
Symbol
Test Conditions
Min
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
V _{(BR) DSX} I_D = 1 mA, V_GS = − 12 V
10
I_DSS
V_DS = 20 V, V_GS = 0
⎯
I_GSS
V_GS = ± 12 V, V_DS = 0
⎯
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⏐Y_fs⏐
V_DS = 3 V, I_D = 0.6 A
(Note 2) 2.3
R_{DS (ON)}
I_D = 0.6 A, V_GS = 4.0 V
I_D = 0.4 A, V_GS = 2.5 V
I_D = 0.2 A, V_GS = 1.8 V
(Note 2)
⎯
(Note 2)
⎯
(Note 2)
⎯
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
t_on
t_off
V_DSF
V_DD = 10 V, I_D = 0.25 A,
⎯
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
I_D = − 0.8 A, V_GS = 0 V
(Note 2) ⎯
Typ. Max Unit
⎯
⎯
V
⎯
⎯
⎯
1
μA
⎯
±1
μA
⎯
1.0
V
3.75 ⎯
S
116 143
134 178 ^mΩ
160 235
268
⎯
pF
44
⎯
pF
34
⎯
pF
9
⎯
ns
16
⎯
− 0.8 − 1.15 V
1
2007-11-01