SSM6N17FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6N17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications
Analog Switch Applications
• Suitable for high-density mounting due to compact package
• High drain-source voltage
• High speed switching
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
50
V
Gate-Source voltage
V_GSS
±7
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D(Note 1)
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating,Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6)
Unit: mm
JEDEC
―
JEITA
SC-70 (6pin)
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
0.4 mm
Marking
6
5
4
Equivalent Circuit
6
5
4
DM
Q1
Q2
1
2
3
1
2
3
This transistor is a electrostatic sensitive device. Please handle with caution.
1
2007-11-01