SSM6N16FE_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6N16FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications
Analog Switching Applications
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on resistance: R_on = 3.0 Ω (max) (@V_GS = 4 V)
: R_on = 4.0 Ω (max) (@V_GS = 2.5 V)
: R_on = 15 Ω (max) (@V_GS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D(Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm² × 6)
0.3 mm
Marking
6
5
4
Equivalent Circuit
6
5
4
DS
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01