SSM6N15FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU
High Speed Switching Applications
Analog Switching Applications
Unit: mm
· Small package
· Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Total rating
V_DS
30
V
V_GSS
±20
V
I_D
100
mA
I_DP
200
P_D (Note)
200
mW
T_ch
150
°C
T_stg
-55~150
°C
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
DP
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2001-12-05