SSM6N04FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switch Applications

SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
• With built-in gate-source resistor: R_GS = 1 MΩ (typ.)
• 2.5 V gate drive
• Low gate threshold voltage: V_th = 0.7~1.3 V
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
20
V
V_GSS
10
V
I_D
100
mA
P_D
200
mW
(Note 1)
T_ch
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Total rating
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Marking
Pin Assignment (top view)
(Q1, Q2 common)
Equivalent Circuit
1
2007-11-01