SSM6N04FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
Unit: mm
· With built-in gate-source resistor: RGS = 1 MΩ (typ.)
· 2.5 V gate drive
· Low gate threshold voltage: Vth = 0.7~1.3 V
· Small package
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Total rating
Symbol
Rating
Unit
V_DS
V_GSS
I_D
20
V
10
V
100
mA
P_D
200
mW
(Note)
T_ch
150
°C
T_stg
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Marking
Pin Assignment (top view)
(Q1, Q2 common)
Equivalent Circuit
1
2003-03-28