SSM6N03FE_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6N03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N03FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Input impedance is high. Driving current is extremely low.
• Can be directly driven by a CMOS device even at low voltage due to
low gate threshold voltage.
• High-speed switching.
• Housed in a ultra-small package which is suitable for high density
mounting.
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
20
V
Gate-source voltage
V_GSS
10
V
Drain current
I_D
100
mA
Drain power dissipation
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
JEDEC
―
Storage temperature
T_stg
−55~150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2N1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Total
(25.4
rating, mounted on FR4 board
mm × 25.4 mm × 1.6 t, Cu Pad:
0.135
mm²
×
6)
0.3 mm
Equivalent Circuit (top view)
6 PIN 5 PIN 4 PIN
Q1
Q2
1 PIN 2 PIN 3 PIN
Marking
6 PIN 5 PIN 4 PIN
DA
1 PIN 2 PIN 3 PIN
1
2007-11-01