SSM6N03FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N03FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· Input impedance is high. Driving current is extremely low.
· Can be directly driven by a CMOS device even at low voltage due to
low gate threshold voltage.
· High-speed switching.
· Housed in a ultra-small package which is suitable for high density
mounting.
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
V_DS
20
V
V_GSS
10
V
I_D
100
mA
P_D (Note 1)
150
mW
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Total rating, mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.135 mm² ´ 6)
0.3 mm
JEDEC
JEITA
TOSHIBA
Weight:
―
―
2-2N1D
g (typ.)
Equivalent Circuit (top view)
6 PIN 5 PIN 4 PIN
Q1
Q2
1 PIN 2 PIN 3 PIN
Marking
6 PIN 5 PIN 4 PIN
DA
1 PIN 2 PIN 3 PIN
1
2001-11-14