SSM6L36FE Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6L36FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L36FE
○ High-Speed Switching Applications
• 1.5-V drive
• Low ON-resistance Q1 Nch: R_on = 1.52Ω (max) (@V_GS = 1.5 V)
R_on = 1.14Ω (max) (@V_GS = 1.8 V)
R_on = 0.85Ω (max) (@V_GS = 2.5 V)
R_on = 0.66Ω (max) (@V_GS = 4.5 V)
R_on = 0.63Ω (max) (@V_GS = 5.0 V)
•
Q2 Pch: R_on = 3.60Ω (max) (@V_GS = -1.5 V)
R_on = 2.70Ω (max) (@V_GS = -1.8 V)
R_on = 1.60Ω (max) (@V_GS = -2.8 V)
R_on = 1.31Ω (max) (@V_GS = -4.5 V)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Symbol
V_DSS
V_GSS
I_D
I_DP
Rating
Unit
20
V
±10
V
500
mA
1000
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Symbol
V_DSS
V_GSS
I_D
I_DP
Rating
Unit
-20
V
±8
V
-330
mA
-660
1.Source1
2.Gate1
3.Drain2
ES6
4.Source2
5.Gate2
6.Drain1
JEDEC
-
JEITA
-
TOSHIBA
2-2N1D
Weight: 3.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
P_D(Note 1)
150
mW
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
1
2008-06-05