SSM6L16FE Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6L16FE
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L16FE
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on-resistance
Q1: R_on = 4 Ω (max) (@V_GS = 2.5 V)
Q2: R_on = 12 Ω (max) (@V_GS = −2.5 V)
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
20
V
±10
V
100
mA
200
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
-20
V
±10
V
-100
mA
-200
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
JEITA
TOSHIBA
―
―
2-2N1D
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta = 25°C) P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Total
(25.4
rating, mounted on FR4 board
mm × 25.4 mm × 1.6 t, Cu Pad:
0.135
mm²
×
6)
0.3 mm
1
2007-11-01