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SSM6L13TU Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Power Management Switch Applications
SSM6L13TU
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.8 V drive
• P–ch , N–ch 2–in–1
• Low ON–resistance: Pch
•
•
: Nch
•
Ron = 460 mΩ (max) (@VGS = −1.8 V)
Ron = 306 mΩ (max) (@VGS = −2.5 V)
Ron = 235 mΩ (max) (@VGS = 1.8 V)
Ron = 178 mΩ (max) (@VGS = 2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
± 12
V
Drain current
DC
ID
Pulse
IDP
0.8
A
1.6
Q2 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
−20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
−0.8
A
−1.6
Absolute Maximum Ratings (Q1 , Q2 Common)
(Ta = 25 °C)
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
1.Source1
2.Gate1
UF6 3.Drain2
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Mounted on an FR4 board (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking
Equivalent Circuit (top view)
654
6
5
4
KV
Q1
Q2
123
1
2
3
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
1
2007-11-01