SSM6L10TU Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6L10TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L10TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance Q1: R_on = 395mΩ (max) (@V_GS = 1.8 V)
Q2: R_on = 980mΩ (max) (@V_GS = -1.8 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
0.5
A
1.5
Q2 Absolute Maximum Ratings (Ta = 25°C)
1
6
2
5
3
4
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
-0.5
A
Pulse
I_DP
-1.5
Absolute Maximum Ratings(Q1,Q2 Common)(Ta = 25°C)
Characteristics
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
P_D
500
mW
(Note 1)
T_ch
150
°C
T_stg
−55~150
°C
1.Source1
2.Gate1
3.Drain2
UF6
JEDEC
4.Source2
5.Gate2
6.Drain1
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645
mm²
)
Marking
654
Equivalent Circuit (top view)
6
5
4
K7
Q1
Q2
123
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01