SSM6L09FU Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type

SSM6L09FU
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L09FU
Power Management Switch
High Speed Switching Applications
Unit: mm
· Small package
· Low on resistance
Q1: Ron = 0.7 Ω (max) (@VGS = 10 V)
Q2: Ron = 2.7 Ω (max) (@VGS = −10 V)
Q1 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
30
V
±20
V
400
mA
800
Q2 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
-30
V
±20
V
-200
mA
-400
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta = 25°C)
P_D (Note1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note1: Total rating, mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm² ´ 6) Figure 1.
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
1
2003-02-19