SSM6L05FU_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Power Management Switch

SSM6L05FU
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type
SSM6L05FU
Power Management Switch
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance
Q1: R_on = 0.8 Ω (max) (@V_GS = 4 V)
Q2: R_on = 3.3 Ω (max) (@V_GS = −4 V)
• Low gate threshold voltage
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
20
V
±12
V
400
mA
800
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V_DS
V_GSS
I_D
I_DP
Rating
Unit
−20
V
±12
V
−200
mA
−400
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta = 25°C) P_D (Note 1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6)
1
2007-11-01