SSM6K407TU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K407TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K407TU
○ DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
2.1±0.1
1.7±0.1
z 4V drive
z Low ON-resistance
: R_on = 440mΩ (max) (@V_GS = 4 V)
: R_on = 300mΩ (max) (@V_GS = 10 V)
1
6
2
5
3
4
Absolute Maximum Ratings (Ta = 25℃) (Note)
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
Rating
V_DSS
V_GSS
I_D
I_DP
P_D (Note1)
T_ch
T_stg
60
±20
2
6
500
150
−55 to 150
Unit
V
V
A
mW
°C
°C
UF6
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Start of commercial production
2008-01
1
2014-03-01