SSM6K406TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K406TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K406TU
○ High-Speed Switching Applications
• 4.5-V drive
• Low ON-resistance: R_on = 38.5 mΩ (max) (@V_GS = 4.5 V)
R_on = 25.0 mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
V_DSS
30
V
Gate–source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
4.4
A
8.8
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
2.1±0.1
1.7±0.1
Unit: mm
1
6
2
5
3
4
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Marking
65
4
KNE
12
3
Equivalent Circuit (top view)
6
54
1
2
3
1
Start of commercial production
2010-02
2014-03-01