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SSM6K404TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type | |||
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SSM6K404TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K404TU
â High-Speed Switching Applications
â Power Management Switch Applications
⢠1.5-V drive
⢠Low ON-resistance: RDS(ON) = 147 m⦠(max) (@VGS = 1.5 V)
RDS(ON) = 100 m⦠(max) (@VGS = 1.8 V)
RDS(ON) = 70 m⦠(max) (@VGS = 2.5 V)
RDS(ON) = 55 m⦠(max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25ËC)
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDSS
20
V
Gateâsource voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
3.0
A
6.0
Power dissipation
PD (Note 1)
500
mW
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating
Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 645 mm2)
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
UF6
JEDEC
â
JEITA
â
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0 V
20
â¯
â¯
V
V (BR) DSX ID = 1 mA, VGS = -10 V
12
â¯
â¯
V
IDSS
VDS =20 V, VGS = 0 V
â¯
â¯
1
μA
IGSS
VGS = ±10 V, VDS = 0 V
â¯
â¯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.35 â¯
1.0
V
âYfsâ
VDS = 3 V, ID = 2.0 A
(Note2) 5.5
11
â¯
S
ID = 2.0 A, VGS = 4.0 V
(Note2) â¯
43
55
RDS (ON)
ID = 2.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
(Note2) â¯
(Note2) â¯
53
70
mΩ
67
100
ID = 0.5 A, VGS = 1.5 V
(Note2) â¯
82
147
Ciss
â¯
400
â¯
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
â¯
68
â¯
pF
Crss
â¯
60
â¯
Qg
Qgs
VDS = 10 V, ID = 3.0 A
VGS = 4 V
Qgd
â¯
5.9
â¯
â¯
4.1
â¯
nC
â¯
1.8
â¯
ton
VDS = 10 V, ID= 2.0 A
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
â¯
14
â¯
ns
â¯
15
â¯
VDSF
ID = - 3.0 A, VGS = 0 V
(Note2) ⯠-0.85 -1.2
V
Start of commercial production
2007-01
1
2014-03-01
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