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SSM6K404TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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SSM6K404TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K404TU
â High-Speed Switching Applications
â Power Management Switch Applications
⢠1.5V drive
⢠Low ON-resistance: Ron = 147 m⦠(max) (@VGS = 1.5 V)
Ron = 100 m⦠(max) (@VGS = 1.8 V)
Ron = 70 m⦠(max) (@VGS = 2.5 V)
Ron = 55 m⦠(max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25ËC)
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDSS
20
V
Gateâsource voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
3.0
A
6.0
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
UF6
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
JEDEC
â
JEITA
TOSHIBA
â
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
âYfsâ
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = 1 mA, VGS = 0 V
ID = 1 mA, VGS = -10 V
VDS =20 V, VGS = 0 V
VGS = ±10 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 2.0 A
ID = 2.0 A, VGS = 4.0 V
ID = 2.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
ID = 0.5 A, VGS = 1.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, ID = 3.0 A
VGS = 4 V
VDS = 10 V, ID= 2.0 A
VGS = 4 V
ID = - 3.0 A, VGS = 0 V
(Note2)
Min
20
12
â¯
â¯
0.35
5.5
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
Typ.
â¯
â¯
â¯
â¯
â¯
11
43
53
67
82
400
68
60
5.9
4.1
1.8
14
15
-0.85
Max
â¯
â¯
1
±1
1.0
â¯
55
70
100
147
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
-1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01
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