SSM6K403TU Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM6K403TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS
SSM6K403TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5V drive
• Low ON-resistance:R_on = 66mΩ (max) (@V_GS = 1.5V)
R_on = 43mΩ (max) (@V_GS = 1.8V)
R_on = 32mΩ (max) (@V_GS = 2.5V)
R_on = 28mΩ (max) (@V_GS = 4.0V)
2.1±0.1
1.7±0.1
UNIT: mm
1
6
2
5
3
4
Absolute Maximum Ratings (Ta = 25˚C) (Note)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Gate-source voltage
V_GSS
±10
V
Drain current
DC
I_D
Pulse
I_DP
4.2
A
8.4
Drain power dissipation
P_D (Note1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
UF6
1,2,5,6 : Drain
3 : Gate
4 : source
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
weight: 7.0mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
1
2007-11-01