SSM6K34TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Current Switching Applications

SSM6K34TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K34TU
High Current Switching Applications
Power Management Switch Applications
• 4.5Vdrive
• Low on resistance:
:R_on = 77 mΩ (max) (@V_GS = 4.5 V)
:R_on = 50 mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
±20
V
I_D
3
A
I_DP
6
P_D
500
mW
(Note 1)
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Total gate charge
Gate−source charge
Gate−drain charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 10 mA, V_GS = 0
V _{(BR) DSX} I_D = 10 mA, V_GS = −20 V
30
⎯
⎯
V
15
⎯
⎯
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
10
μA
I_GSS
V_GS = ±16 V, V_DS = 0
⎯
⎯
±10
μA
V_th
V_DS = 10 V, I_D = 1 mA
1.3
⎯
2.5
V
⏐Y_fs⏐
V_DS = 10 V, I_D = 2 A
(Note2) 3.4 6.8
⎯
S
R_{DS (ON)}
I_D = 2 A, V_GS = 4.5 V
I_D = 2 A, V_GS = 10 V
(Note2) ⎯
58
77
mΩ
(Note2) ⎯
38
50
C_iss
⎯ 470 ⎯
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
60
⎯
pF
C_oss
⎯
80
⎯
Q_g
V_DS = 24 V, I_DS= 3.0 A
Q_gs
V_GS = 10 V
Q_gd
―
10
―
―
7.6
―
nC
―
2.4
―
t_on
V_DD = 15 V, I_D = 2 A,
t_off
V_GS = 0~10 V, R_G = 4.7 Ω
⎯
8.3
⎯
ns
⎯
22
⎯
V_DSF
I_D = -3A, V_GS = 0V
(Note2) ― −0.8 −1.2
V
Note2: Pulse test
1
2007-11-01