SSM6K30FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (Π-MOSⅦ) High speed switching DC-DC Converter

SSM6K30FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Π-MOSⅦ)
SSM6K30FE
○ High speed switching
○ DC-DC Converter
Unit: mm
• Small package
• Low R_{DS (ON)}
• High speed switching
: R_on = 210 mΩ (max) (@V_GS = 10 V)
: R_on = 420 mΩ (max) (@V_GS = 4 V)
: t_on = 19 ns (typ)
: t_off = 10 ns (typ)
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Symbol
V_DS
V_GSS
Rating
Unit
20
V
±20
V
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain current
DC
I_D
1.2
A
Pulse
I_DP
2.4
JEDEC
―
Drain power dissipation
Channel temperature
Storage temperature
P_D (Note 1)
500
mW
T_ch
150
°C
T_stg
−55~150
°C
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Marking
Equivalent Circuit (top view)
654
654
KA
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against static electricity. Operators should wear anti-static clothing, and containers
and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01