SSM6K22FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Current Switching Applications

SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE
High Current Switching Applications
DC-DC Converter
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on resistance:
R_on = 170 mΩ (max) (@V_GS = 4.0 V)
R_on = 230 mΩ (max) (@V_GS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
Pulse
I_DP
1.4
A
5.6
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation
Channel temperature
Storage temperature range
P_D
500
mW
(Note 1)
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
JEITA
TOSHIBA
-
-
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 3 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Marking
Equivalent Circuit (Top View)
654
654
KD
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01