SSM6K210FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K210FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K210FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
Unit: mm
• 4.0-V drive
• Low ON-resistance: R_on = 371 mΩ (max) (@V_GS = 4.0 V),
R_on = 228 mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
1.4
A
2.8
Drain power dissipation
P_D (Note1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
1.2.5.6
3.
4.
ES6
: Drain
: Gate
: Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
654
NP
Equivalent Circuit (top view)
654
123
123
Start of commercial production
2008-04
1
2014-03-01