SSM6K209FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6K209FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K209FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 4.0V drive
• Low ON-resistance: R_on = 145mΩ (max) (@V_GS = 4.0 V)
R_on = 74mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
UNIT: mm
1.6±0.05
1.2±0.05
1
6
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
V_DSS
30
V
V_GSS
± 20
V
Drain current
DC
I_D
Pulse
I_DP
2.5
A
5.0
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
2
5
3
4
ES6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3.0 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = 1 mA, V_GS = –20 V
30
⎯
⎯
V
15
⎯
⎯
I_DSS
V_DS = 30 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ± 16 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 1 mA
1.2
⎯
2.6
V
⏐Y_fs⏐ V_DS = 5 V, I_D = 1.5 A
(Note2) 2.7
5.3
⎯
S
R_{DS (ON)}
I_D = 1.5 A, V_GS = 10 V
I_D = 1.0 A, V_GS = 4.0 V
(Note2)
⎯
(Note2)
⎯
54
74
mΩ
85
145
C_iss
⎯
320
⎯
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
⎯
55
⎯
pF
C_rss
⎯
44
⎯
Q_g
Q_gs
V_DS = 15V, I_D = 2.5 A
V_GS = 10 V
Q_gd
⎯
7.7
⎯
⎯
6.0
⎯
nC
⎯
1.7
⎯
t_on
V_DD = 15 V, I_D = 1.0 A,
t_off
V_GS = 0~4.0 V, R_G = 10 Ω
⎯
17
⎯
ns
⎯
12
⎯
V_DSF I_D = –2.5 A, V_GS = 0 V (Note2)
⎯
-0.9 –1.2
V
1
2007-11-01