SSM6K204FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6K204FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K204FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance:
R_on = 307 mΩ (max) (@V_GS = 1.5V)
R_on = 214 mΩ (max) (@V_GS = 1.8V)
R_on = 164 mΩ (max) (@V_GS = 2.5V)
R_on = 126 mΩ (max) (@V_GS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
2.0
A
4.0
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
1, 2, 5, 6 : Drain
3
: Gate
4
ES6
: Source
JEDEC
―
JEITA
TOSHIBA
―
2-2N1A
Weight: 3 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
Test Condition
I_D = 1 mA, V_GS = 0 V
I_D = 1 mA, V_GS = – 10 V
V_DS = 20 V, V_GS = 0 V
V_GS = ± 10 V, V_DS = 0 V
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 1.0 A
I_D = 1.0 A, V_GS = 4.0 V
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
I_D = 0.3 A, V_GS = 1.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, I_D= 2.0 A
V_GS = 4 V
V_DD = 10 V, I_D = 0.5 A,
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
I_D = − 2.0 A, V_GS = 0 V
(Note2)
Min Typ. Max
20
⎯
⎯
12
⎯
⎯
⎯
⎯
1
⎯
⎯
±1
0.35 ⎯
1.0
2.6
5.2
⎯
⎯
90
126
⎯
115 164
⎯
150 214
⎯
185 307
⎯
195
⎯
⎯
35
⎯
⎯
29
⎯
⎯
3.4
⎯
⎯
2.3
⎯
⎯
1.1
⎯
⎯
8.0
⎯
⎯
9.0
⎯
⎯ – 0.85 – 1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01