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SSM6K203FE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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SSM6K203FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K203FE
â High-Speed Switching Applications
â Power Management Switch Applications
⢠1.5 V drive
⢠Low ON-resistance:
Ron = 153 m⦠(max) (@VGS = 1.5V)
Ron = 106 m⦠(max) (@VGS = 1.8V)
Ron = 76 m⦠(max) (@VGS = 2.5V)
Ron = 61 m⦠(max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25ËC)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDSS
20
V
Gateâsource voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
2.8
A
5.6
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
ES6
JEDEC
â
JEITA
TOSHIBA
â
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
âYfsâ
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = 1 mA, VGS = 0 V
ID = 1 mA, VGS = â10 V
VDS = 20 V, VGS = 0 V
VGS = ± 10 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 2.0 A
ID = 2.0 A, VGS = 4.0 V
ID = 2.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
ID = 0.5 A, VGS = 1.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, ID = 2.8 A
VGS = 4 V
VDD = 10 V, ID = 2 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = â 2.8 A, VGS = 0 V
(Note2)
Min Typ. Max
20
â¯
â¯
12
â¯
â¯
â¯
â¯
1
â¯
â¯
±1
0.35 â¯
1.0
5.3 10.5 â¯
â¯
49
61
â¯
59
76
â¯
73
106
â¯
88
153
â¯
400
â¯
â¯
68
â¯
â¯
60
â¯
â¯
5.9
â¯
â¯
4.1
â¯
â¯
1.8
â¯
â¯
14
â¯
â¯
15
â¯
⯠â 0.85 â 1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01
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