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SSM6K202FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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SSM6K202FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K202FE
â High-Speed Switching Applications
â Power Management Switch Applications
⢠1.8 V drive
⢠Low ON-resistance:
Ron = 145 m⦠(max) (@VGS = 1.8V)
Ron = 101 m⦠(max) (@VGS = 2.5V)
Ron = 85 m⦠(max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25ËC)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDS
30
V
Gateâsource voltage
VGSS
± 12
V
Drain current
DC
ID
Pulse
IDP
2.3
A
4.6
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
1, 2, 5, 6 : Drain
3
: Gate
4
ES6
: Source
JEDEC
â
JEITA
TOSHIBA
â
2-2N1A
Weight: 3 mg (typ.)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0
30
â¯
â¯
V
V (BR) DSX ID = 1 mA, VGS = â12 V
18
â¯
â¯
V
IDSS
VDS = 30 V, VGS = 0
â¯
â¯
1
μA
IGSS
VGS = ± 12 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
â¯
1.0
V
âYfsâ
VDS = 3 V, ID = 1.5 A
(Note2) 3.9
7.8
â¯
S
RDS (ON)
ID = 1.5 A, VGS = 4.0 V
ID = 1.0 A, VGS = 2.5 V
ID = 0.5 A, VGS = 1.8 V
(Note2)
â¯
(Note2)
â¯
(Note2)
â¯
66
85
78
101 mΩ
95
145
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
270
â¯
pF
Coss
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
56
â¯
pF
â¯
47
â¯
pF
ton
toff
VDSF
VDD = 10 V, ID = 2 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
â¯
20
â¯
ns
â¯
31
â¯
ID = â 2.3 A, VGS = 0 V
(Note2) ⯠â 0.85 â 1.2
V
1
2007-11-01
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