SSM6K201FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch Applications High Speed Switching Applications

Tentative
SSM6K201FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K201FE
Power Management Switch Applications
High Speed Switching Applications
• 1.8 V drive
• Low ON-resistance:
R_on = 186 mΩ (max) (@V_GS = 1.8V)
R_on = 119 mΩ (max) (@V_GS = 2.5V)
R_on = 91 mΩ (max) (@V_GS = 4.0V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DS
20
V
Gate–source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
2.3
A
4.6
Drain power dissipation
P_D (Note 1)
500
W
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1, 2, 5, 6 : Drain
3
: Gate
4
ES6
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note2: Pulse test
Symbol
Test Condition
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
t_on
t_off
V_DSF
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = –12 V
V_DS = 20 V, V_GS = 0
V_GS = ± 12 V, V_DS = 0
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 1.0 A
(Note2)
I_D = 1.0 A, V_GS = 4.0 V
(Note2)
I_D = 0.5 A, V_GS = 2.5 V
I_D = 0.2 A, V_GS = 1.8 V
(Note2)
(Note2)
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DD = 10 V, I_D = 2.0 A,
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
I_D = − 2.3 A, V_GS = 0 V
(Note2)
Min Typ. Max Unit
20
⎯
⎯
V
10
⎯
⎯
V
⎯
⎯
1
µA
⎯
⎯
±1
µA
0.4
⎯
1.0
V
2.8 5.5
⎯
S
⎯
71
91
⎯
91
119 mΩ
⎯
121 186
⎯
220
⎯
pF
⎯
51
⎯
pF
⎯
42
⎯
pF
⎯
12
⎯
ns
⎯
10
⎯
⎯ – 0.85 – 1.20 V
1
2006-04-25