SSM6K08FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category

SSM6K08FU
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K08FU
High Speed Switching Applications
· Small package
· Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V)
Ron = 140 mΩ (max) (@VGS = 2.5 V)
· High-speed switching: ton = 16 ns (typ.)
toff = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
I_DP
P_D
(Note1)
T_ch
T_stg
20
V
±12
V
1.6
A
3.2
300
mW
150
°C
-55~150
°C
Note1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm² ´ 6) Figure 1.
Marking
Circuit (top view)
654
Equivalent
654
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
KDC
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-24