SSM6K07FU_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC-DC Converters

SSM6K07FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K07FU
DC-DC Converters
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance : R_on = 130 mΩ max (@V_GS = 10 V)
: R_on = 220 mΩ max (@V_GS = 4 V)
• Low input capacitance : C_iss = 102 pF typ.
: C_rss = 22 pF typ.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
V_DS
30
V
V_GSS
±20
V
I_D
1.5
A
I_DP
3.0
Drain power dissipation
P_D
300
mW
(Note 1)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-2J1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.8 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm2 × 6)
Marking
Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01