SSM6K07FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC-DC Converters High Speed Switching Applications

SSM6K07FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K07FU
DC-DC Converters
High Speed Switching Applications
Unit: mm
· Small package
· Low on resistance : Ron = 130 mΩ max (@VGS = 10 V)
: Ron = 220 mΩ max (@VGS = 4 V)
· Low input capacitance : Ciss = 102 pF typ.
: Crss = 22 pF typ.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
±20
V
I_D
1.5
A
I_DP
3.0
P_D
300
mW
(Note 1)
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm² ´ 6)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-28