SSM6J51TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Current Switching Applications

SSM6J51TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
SSM6J51TU
High Current Switching Applications
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on-resistance:
R_on = 54 mΩ (max) (@V_GS = -2.5 V)
85 mΩ (max) (@V_GS = -1.8 V)
150mΩ(max) (@V_GS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
-12
V
V_GSS
±8
V
I_D
-4
A
I_DP
-8
P_D (Note 1)
500
mW
T_ch
150
°C
T_stg
−55~150
°C
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
-
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
-
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
Weight: 7 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Marking
Equivalent Circuit (top view)
654
654
KPC
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01