SSM6J50TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Current Switching Applications

SSM6J50TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU
○ High Current Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low on-resistance:
R_on =
R_on =
R_on =
205mΩ (max) (@V_GS = -2.0 V)
100mΩ (max) (@V_GS = -2.5 V)
64mΩ (max) (@V_GS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
I_D
-2.5
A
Pulse
I_DP
-5
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation
P_D
500
mW
(Note 1)
Channel temperature
Storage temperature range
T_ch
150
°C
JEDEC
-
T_stg
−55~150
°C
JEITA
-
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2T1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 7 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Marking
654
Equivalent Circuit
654
KPB
123
123
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01