SSM6J505NU_14 Datasheet, PDF(1/9 Page) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

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SSM6J505NU_14 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

MOSFETs Silicon P-Channel MOS (U-MOSî±)

SSM6J505NU

1. Applications

â¢ Power Management Switches

2. Features

(1) 1.2 V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 61 mâ¦ (max) (@VGS = -1.2 V)

RDS(ON) = 30 mâ¦ (max) (@VGS = -1.5 V)

RDS(ON) = 21 mâ¦ (max) (@VGS = -1.8 V)

RDS(ON) = 16 mâ¦ (max) (@VGS = -2.5 V)

RDS(ON) = 12 mâ¦ (max) (@VGS = -4.5 V)

3. Packaging and Pin Assignment

UDFN6B

SSM6J505NU

1.2.5.6 Drain

3. Gate

4. Source

Start of commercial production

2012-05

2014-04-04

Rev.3.0

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