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SSM6J505NU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Power Management Switches
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J505NU
1. Applications
• Power Management Switches
2. Features
(1) 1.2 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V)
RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
SSM6J505NU
1.2.5.6 Drain
3. Gate
4. Source
UDFN6B
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-12
V
Gate-source voltage
VGSS
±6
Drain current (DC)
(Note 1)
ID
-12
A
Drain current (pulsed)
(Note 1),(Note 2)
IDP
-30
Power dissipation
(Note 3)
PD
1.25
W
Power dissipation
t ≤ 10 s
(Note 3)
PD
2.5
W
Channel temperature
Tch
150

Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2)
1
2012-08-09
Rev.2.0
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