SSM6J503NU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM6J503NU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J503NU
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: R_DS(ON)= 89.6 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 57.9 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 41.7 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 32.4 mΩ (max) (@V_GS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
−20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
−6.0
A
Pulse
I_DP (Note 1)
-24.0
Power Dissipation
P_D (Note 2)
1
W
t ≦10s
2
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to 150
°C
1,2,5,6: Drain
3: Gate
Note: Using continuously under heavy loads (e.g. the application of
UDFN6B
4: Source
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2AA1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 8.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking(Top View)
65 4
SP3
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
654
Drain
Source
1 23
Polarity marking
1
2
3
1 23
Polarity marking (on the top)
*Electrodes : on the bottom
Start of commercial production
2010-11
1
2014-03-01