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SSM6J503NU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications | |||
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SSM6J503NU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSâ
¥)
SSM6J503NU
Power Management Switch Applications
⢠1.5V drive
⢠Low ON-resistance: RDS(ON)= 89.6 m⦠(max) (@VGS = -1.5 V)
RDS(ON) = 57.9 m⦠(max) (@VGS = -1.8 V)
RDS(ON) = 41.7 m⦠(max) (@VGS = -2.5 V)
RDS(ON) = 32.4 m⦠(max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
â20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
â6.0
A
Pulse
IDP (Note 1)
-24.0
Power Dissipation
PD (Note 2)
1
W
t â¦10s
2
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
1,2,5,6: Drain
3: Gate
Note: Using continuously under heavy loads (e.g. the application of
UDFN6B
4: Source
high temperature/current/voltage and the significant change in
JEDEC
â
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
â
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2AA1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 8.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
65 4
SP3
1 23
Polarity marking
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
654
1
2
3
Drain
Source
1 23
Polarity marking (on the top)
*Electrodes : on the bottom
1
2011-01-26
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