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| SSM6J414TU_14 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI) | |||
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MOSFETs Silicon P-Channel MOS (U-MOSî±)
SSM6J414TU
1. Applications
⢠Power Management Switches
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 54 m⦠(max) (@VGS = -1.5 V)
RDS(ON) = 36 m⦠(max) (@VGS = -1.8 V)
RDS(ON) = 26 m⦠(max) (@VGS = -2.5 V)
RDS(ON) = 22.5 m⦠(max) (@VGS = -4.5 V)
3. Packaging and Pin Configuration
UF6
SSM6J414TU
1, 2, 5, 6: Drain
3: Gate
4: Source
Start of commercial production
2012-06
1
2014-04-04
Rev.4.0
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