SSM6J412TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM6J412TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
Unit: mm
• 1.5-V drive
• Low ON-resistance: R_DS(ON) = 99.6 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 67.8 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 51.4 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 42.7 mΩ (max) (@V_GS = -4.5 V)
2.1±0.1
1.7±0.1
1
6
2
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
3
4
Drain-source voltage
V_DSS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D
-4.0
A
Pulse
I_DP (Note 1)
-16.0
Power dissipation
P_D (Note 2)
1
W
Channel temperature
T_ch
150
°C
UF6
1,2,5,6: Drain
3: Gate
4: Source
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
―
TOSHIBA
2-2T1D
Weight : 7.0mg ( typ. )
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pw ≤ 10μs, Duty. ≤ 1%
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 645 mm²)
Marking (Top View)
6
5
4
Equivalent Circuit
6
5
4
KPH
1
2
3
1
2
3
Start of commercial production
2010-03
1
2014-03-01