SSM6J410TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS3)

SSM6J410TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ)
SSM6J410TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
• 4-V drive
• Low ON-resistance
R_DS(ON) = 393mΩ (max) (@V_GS = –4 V)
R_DS(ON) = 216mΩ (max) (@V_GS = –10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
-30
V
Gate-Source voltage
V_GSS
± 20
V
Drain current
DC
I_D (Note1)
-2.1
A
Pulse
I_DP(Note1)
-4.2
Power dissipation
P_D(Note2)
500
mW
t = 10s
1000
1,2,5,6 : Drain
3
: Gate
4
: Source
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
6
5
4
KPG
1
2
3
Equivalent Circuit (top view)
654
123
1
Start of commercial production
2010-02
2014-03-01