SSM6J409TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

SSM6J409TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM6J409TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5V drive
• Low ON-resistance:
R_on = 72.3mΩ (max) (@V_GS = -1.5 V)
R_on = 46.2mΩ (max) (@V_GS = -1.8 V)
R_on = 30.2mΩ (max) (@V_GS = -2.5 V)
R_on = 22.1mΩ (max) (@V_GS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
−20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D (Note 1)
−9.5
A
Pulse
I_DP (Note 1)
−19.0
Drain power dissipation
P_D (Note 2)
1
W
t=10s
2
1,2,5,6 : Drain
3
: Gate
4
: Source
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
2-2T1D
maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 7.6mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
Equivalent Circuit (top view)
654
654
K 11
123
123
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Start of commercial production
2009-06
1
2014-03-01