SSM6J402TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

SSM6J402TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J402TU
○ DC/DC Converter Application
○ High-Speed Switching Applications
• 4.0 V drive
• Low ON-resistance : R_DS(ON) = 225mΩ max (@V_GS = −4 V)
: R_DS(ON) = 117mΩ max (@V_GS = −10 V)
2.1±0.1
1.7±0.1
unit: mm
1
6
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
2
5
3
4
Drain–source voltage
V_DSS
−30
V
Gate–source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
−2.0
A
−4.0
Drain power dissipation
P_D(注 1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_D = −1 mA, V_GS = 0 V
I_D = −1 mA, V_GS = 20 V
−30 ⎯
⎯
V
−15 ⎯
⎯
I_DSS
V_DS = −30 V, V_GS = 0 V
⎯
⎯
−1
μA
I_GSS
V_GS = ±16 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = −5 V, I_D = −1 mA
−1.2
⎯
−2.6
V
|Y_fs|
V_DS = −5 V, I_D = −1 A
(Note2) 1.6 3.1
⎯
S
R_{DS (ON)}
I_D = −1 A, V_GS = −10 V
I_D = −0.5 A, V_GS = −4 V
(Note2) ⎯
(Note2) ⎯
80 117
mΩ
160 225
C_iss
⎯ 280 ⎯
C_oss
V_DS = −15 V, V_GS = 0 V, f = 1 MHz
⎯
80
⎯
pF
C_rss
⎯
45
⎯
Q_g
V_DS = −15V, I_D = −2.0 A
Q_gs
V_GS = −10 V
Q_gd
⎯
5.3
⎯
⎯
4.1
⎯
nC
⎯
1.2
⎯
t_on
V_DD = −15 V, I_D = −1 A
t_off
V_GS = 0 to −4 V, R_G = 10 Ω
⎯
16
⎯
ns
⎯
35
⎯
V_DSF
I_D = 2 A, V_GS = 0 V
(Note2) ⎯
0.8
1.2
V
Start of commercial production
2008-01
1
2014-03-01